Growth of Zno Nano Rods on different substrates and fabrication of Hybrid Light Emitting Diode (LED) on gold sputtered glass substrate | |
| Author | Sarahnaz, Sadia |
| Call Number | AIT Thesis no.ISE-13-28 |
| Subject(s) | Hybrid Light Emitting Diode (LED) Zno Nano Rods--Growth |
| Note | A thesis to be submitted in partial fulfillment of the requirements for the degree of Master of Engineering in Microelectronics & Embedded System, School of Engineering and Technology |
| Publisher | Asian Institute of Technology |
| Series Statement | Thesis ; no. ISE-13-28 |
| Abstract | Nanostructures of ZnO are inviting attention due to their versatile application prospects. One of the major areas of research interest is their use in the fabrication of optoelectronic devices. One - dimensional nanostructure can be synthesized using a simple hydrothermal process. Any type of substrate can be used for their synthesis and can be done at relatively lower costs and lower temperatures. We reported here three different types of heterojunction LED dev ices combin ed with ZnO nanorods . The f irst design structure is Au/ZnO nanorods/ PFO/PEDOT/Al. This is placed on glass and plastic substrates. The s econd design consists of Au/ZnO nanorods/PFO/p - Si/Al and is established on p - Si. These two designs (first and second) include seed solution or sol - gel method . The final and optimized design of LED is fabricated with gold sputtered glass substrate with structure PEDOT/PFO/ ZnO nanorods/ gold sputtered glass substrates . We presented here optical and e lectrical performance of the fabricated LED device. The first designed LED device did not exhibit the significant response due to ine ffective adhesive layers of p type material. The second design shows rect ifying micro level current in I - V characteristics curve wh ere cut in voltage is 4V and saturation current is 15micro ampere and green - yellow broad emission as optical response. The third design of LED , which is established with gold sputtering method, conducts significantly high rectifying current with smaller cut in voltage. The cut in voltage of this optimized design is 2V and satu ration current is approximately 1.823 mA that is100 times higher than the design with p - Si. Optical response shows the same emission of light because of applying same p type material s PFO and ZnO structure crystal. |
| Year | 2013 |
| Corresponding Series Added Entry | Asian Institute of Technology. Thesis ; no. ISE-13-28 |
| Type | Thesis |
| School | School of Engineering and Technology (SET) |
| Department | Department of Industrial Systems Engineering (DISE) |
| Academic Program/FoS | Industrial Systems Engineering (ISE) |
| Chairperson(s) | Afzulpurkar, Nitin V. |
| Examination Committee(s) | Amporn Poyai;Chumnarn Punyasai |
| Degree | Thesis (M.Eng.) - Asian Institute of Technology, 2013 |